NSVMUN5214DW1T3G - onsemi

Manufacturer Part Number

NSVMUN5214DW1T3G

Manufacturer

onsemi

Introduction

Dual NPN pre-biased bipolar junction transistor (BJT) array

Product Features and Performance

Provides two independent NPN transistors in a single package

Pre-biased transistors for simple on/off control

Low saturation voltage for efficient switching

High current gain for amplification applications

Suited for low-voltage, low-power analog and digital circuits

Compact surface-mount package

Product Advantages

Integrated design reduces component count

Pre-biased for easy implementation

Efficient switching and amplification performance

Small footprint for space-constrained designs

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

Collector-Emitter Saturation Voltage: 250mV @ 10mA

DC Current Gain (hFE): 80 min. @ 5mA, 10V

Base Resistor: 10kΩ

Emitter-Base Resistor: 47kΩ

Quality and Safety Features

RoHS3 compliant

Reliable surface-mount package (SC-88/SC70-6/SOT-363)

Compatibility

Suitable for a variety of analog and digital circuit applications

Application Areas

Low-voltage, low-power circuits

Switching and amplification in consumer electronics

Control and logic circuits in industrial equipment

Product Lifecycle

Current product, no discontinuation planned

Replacement or upgrade options available from manufacturer

Key Reasons to Choose This Product

Integrated dual-transistor design for space-saving

Pre-biased configuration for simplified implementation

Efficient switching and amplification performance

Reliable surface-mount package

Compliance with RoHS3 environmental standards