NSVMUN5333DW1T1G - onsemi

Manufacturer Part Number

NSVMUN5333DW1T1G

Manufacturer

onsemi

Introduction

This is a dual bipolar junction transistor (BJT) array with pre-biased transistors. It features two transistors in a single package, one NPN and one PNP, with integrated base resistors for biasing.

Product Features and Performance

Two transistors in a single 6-pin SC-88/SC70-6/SOT-363 package

One NPN and one PNP transistor, pre-biased

7kΩ base resistor and 47kΩ emitter-base resistor

250mW power dissipation rating

50V collector-emitter breakdown voltage

100mA maximum collector current

500nA maximum collector cutoff current

250mV maximum collector-emitter saturation voltage at 1mA and 10mA collector current

Minimum DC current gain of 80 at 5mA collector current and 10V collector-emitter voltage

Product Advantages

Compact size for space-constrained applications

Pre-biased for simplified circuit design

Integrated resistors eliminate the need for external components

Balances the characteristics of the NPN and PNP transistors

Key Technical Parameters

Package: 6-TSSOP, SC-88, SOT-363

RoHS compliance: RoHS3 Compliant

Manufacturer's packaging: Tape & Reel (TR)

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Robust packaging and manufacturing processes ensure reliability

Compatibility

This dual BJT array is compatible with a wide range of electronic circuits and systems that require complementary transistor pairs, such as analog amplifiers, switches, and logic gates.

Application Areas

Analog and digital circuits

Switches and logic gates

Small signal amplifiers

Biasing and level shifting circuits

Product Lifecycle

The NSVMUN5333DW1T1G is an active product and is not nearing discontinuation. Replacements and upgrades may be available from onsemi, depending on market needs and product roadmaps.

Key Reasons to Choose This Product

Compact size and integrated design for space-saving applications

Pre-biased transistors simplify circuit design and reduce the need for external components

Balanced characteristics between the NPN and PNP transistors for improved performance

Robust packaging and RoHS3 compliance for quality and environmental responsibility

Wide compatibility with various analog and digital circuit applications