NSVMUN5312DW1T2G - onsemi

Manufacturer Part Number

NSVMUN5312DW1T2G

Manufacturer

onsemi

Introduction

High-performance dual array transistor with integrated resistors in a small surface-mount package.

Product Features and Performance

Dual array transistor with 1 NPN and 1 PNP transistor

Integrated 22kΩ base and emitter-base resistors

High current gain (hFE) of 60 minimum

Low collector-emitter saturation voltage (Vce(sat)) of 250mV maximum

High collector-emitter breakdown voltage (BVCEO) of 50V

Low collector cutoff current (ICBO) of 500nA maximum

Power rating of 250mW

Product Advantages

Compact surface-mount package

Integrated resistors for easy biasing

Consistent and reliable performance

Suitable for space-constrained applications

Key Technical Parameters

Manufacturer Part Number: NSVMUN5312DW1T2G

Package: 6-TSSOP, SC-88, SOT-363

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V

Resistor Base (R1): 22kOhms

Resistor Emitter Base (R2): 22kOhms

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Suitable for a wide range of electronic circuits and applications

Application Areas

Analog and digital circuits

Power supply and control systems

Portable electronics

Industrial automation

Product Lifecycle

Currently in active production

No plans for discontinuation

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Compact and space-saving design

Integrated resistors for easy biasing

High performance and reliability

Suitable for a variety of applications

RoHS compliance for environmental responsibility