Manufacturer Part Number
NSVMMUN2235LT1G
Manufacturer
onsemi
Introduction
Pre-biased NPN bipolar junction transistor (BJT) with integrated resistor network
Product Features and Performance
Pre-biased transistor with integrated resistor network
Low collector-emitter saturation voltage
High DC current gain
Suitable for various electronic circuits and applications
Designed for automotive and industrial use
Product Advantages
Simplified circuit design with integrated resistor network
Improved reliability and performance
Enhanced thermal management
Compact surface mount package
Key Technical Parameters
Power Rating: 246 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 500 nA
Collector-Emitter Saturation Voltage: 250 mV @ 1 mA, 10 mA
DC Current Gain: 80 min @ 5 mA, 10 V
Integrated Resistor Values: 2.2 kΩ, 47 kΩ
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Reliable and durable performance
Compatibility
Suitable for various electronic circuits and applications
Compatible with surface mount assembly processes
Application Areas
Automotive electronics
Industrial control systems
Power supplies
Audio amplifiers
Switch mode power supplies
Product Lifecycle
Currently available and in production
No known plans for discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Simplified circuit design with integrated resistor network
Improved reliability and performance for automotive and industrial applications
Compact and efficient surface mount package
Automotive-grade quality and safety features
Suitable for a wide range of electronic circuits and applications