Manufacturer Part Number
NSVMMBT589LT1G
Manufacturer
onsemi
Introduction
The NSVMMBT589LT1G is a PNP bipolar junction transistor (BJT) designed for surface mount applications.
Product Features and Performance
Capable of operating at high temperatures up to 150°C
Supports high collector current up to 1A
Achieves a minimum DC current gain (hFE) of 100 at 500mA and 2V
Offers a high transition frequency of 100MHz
Provides a low collector-emitter saturation voltage of 650mV at 200mA and 2A
Product Advantages
Compact surface mount package (SOT-23-3)
Suitable for high-power, high-frequency applications
Excellent thermal performance for reliable operation
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 30V
Collector Cutoff Current: 100nA
Power Dissipation: 310mW
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Packaged in Tape and Reel for automated assembly
Compatibility
This transistor is compatible with various surface mount applications and can be used as a replacement or upgrade for similar PNP BJT devices.
Application Areas
Switching circuits
Amplifier circuits
Power management
Audio and instrumentation equipment
Product Lifecycle
The NSVMMBT589LT1G is an active product and is not nearing discontinuation. Replacement or upgraded versions may become available in the future.
Key Reasons to Choose This Product
Excellent thermal management for reliable high-power operation
High-frequency performance for advanced circuit designs
Compact surface mount package for space-constrained applications
RoHS3 compliance for environmentally-conscious products
Tape and Reel packaging for efficient automated assembly