Manufacturer Part Number
NSVMMBT2907AWT1G
Manufacturer
onsemi
Introduction
High-performance, surface-mount PNP bipolar junction transistor (BJT) in a compact SOT-323 (SC-70) package.
Product Features and Performance
High-frequency operation up to 200 MHz
Low collector-emitter saturation voltage of 1.6 V at 50 mA, 500 mA
Compact SOT-323 (SC-70) surface-mount package
Wide operating temperature range of -55°C to 150°C
Suitable for a variety of high-frequency and power-sensitive applications
Product Advantages
Excellent high-frequency performance
Low saturation voltage for efficient power handling
Small, space-saving package
Robust thermal and environmental capabilities
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 60 V
Collector Current (Max): 600 mA
DC Current Gain (Min): 100 @ 150 mA, 10 V
Power Dissipation (Max): 150 mW
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Durable, high-quality construction
Compatibility
Compatible with a wide range of electronic circuits and systems requiring a high-performance PNP bipolar transistor
Application Areas
Switching and amplification circuits
Power management and control
High-frequency analog and digital applications
Consumer electronics, industrial, and automotive electronics
Product Lifecycle
This product is an active and commonly available part from onsemi.
Replacement or upgrade options may be available from onsemi or other manufacturers.
Key Reasons to Choose This Product
Excellent high-frequency performance up to 200 MHz
Low saturation voltage for efficient power handling
Compact, space-saving SOT-323 (SC-70) package
Wide operating temperature range suitable for diverse applications
Robust construction and RoHS3 compliance for reliable operation
Compatibility with a wide range of electronic circuits and systems