NSVMMBT5401LT3G - onsemi

Manufacturer Part Number

NSVMMBT5401LT3G

Manufacturer

onsemi

Introduction

High-voltage, high-gain PNP bipolar junction transistor (BJT)

Product Features and Performance

Operates at high voltages up to 150V

High current capability up to 500mA

High current gain (hFE) of at least 60

High-speed operation with 300MHz transition frequency

Wide operating temperature range from -55°C to 150°C

Product Advantages

Suitable for high-voltage, high-current applications

Excellent performance characteristics

Reliable and durable design

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 150V

Collector Current (IC): 500mA

Collector Cutoff Current (ICBO): 50nA

Collector-Emitter Saturation Voltage (VCE(sat)): 500mV @ 5mA, 50mA

Current Gain (hFE): 60 min. @ 10mA, 5V

Transition Frequency (fT): 300MHz

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high-quality standards

Compatibility

Surface mount package (SOT-23-3)

Compatible with standard SMT assembly processes

Application Areas

High-voltage, high-current amplifiers

Switch-mode power supplies

Motor control circuits

Telecommunications equipment

Industrial control systems

Product Lifecycle

Current production model

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Excellent performance characteristics for high-voltage, high-current applications

Reliable and durable design for long-lasting operation

Wide operating temperature range for versatile use

Surface mount package for efficient PCB integration

RoHS3 compliance for environmental responsibility