NSV20200LT1G - onsemi

Manufacturer Part Number

NSV20200LT1G

Manufacturer

onsemi

Introduction

The NSV20200LT1G is a PNP bipolar junction transistor (BJT) from onsemi, designed for general-purpose amplification and switching applications.

Product Features and Performance

High current handling capability up to 2A

Wide operating temperature range of -55°C to 150°C

High DC current gain (hFE) of 250 or more at 500mA, 2V

High transition frequency of 100MHz

Low collector-emitter saturation voltage (VCE,sat) of 180mV at 200mA, 2A

Product Advantages

Suitable for a wide range of applications due to its versatile performance

Robust design withstands high temperatures and high current conditions

Optimized for efficient amplification and switching in electronic circuits

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 20V

Collector Cutoff Current (ICBO): 100nA (max)

Power Dissipation (Ptot): 460mW

Quality and Safety Features

RoHS3 compliant

Reliable performance in harsh environments

Compatibility

Compatible with standard SOT-23-3 (TO-236) surface mount packages

Application Areas

Amplifiers

Switches

General-purpose electronic circuits

Product Lifecycle

The NSV20200LT1G is an actively supported product in onsemi's portfolio.

Replacements and upgrades may be available in the future as technology evolves.

Key Reasons to Choose This Product

High current handling capability and wide temperature range make it suitable for diverse applications.

Optimized for efficient amplification and switching with its high DC current gain and low saturation voltage.

Robust design and RoHS3 compliance ensure reliable performance in various electronic systems.

Compatibility with standard SOT-23-3 surface mount packages simplifies integration into existing designs.