NSV1C300ET4G-VF01 - onsemi

Manufacturer Part Number

NSV1C300ET4G-VF01

Manufacturer

onsemi

Introduction

High voltage, high current PNP bipolar junction transistor (BJT)

Designed for automotive and industrial applications

Product Features and Performance

Wide operating temperature range of -65°C to 150°C (TJ)

High power handling capability up to 2.1W

High collector-emitter breakdown voltage up to 100V

High collector current up to 3A

High current gain (hFE) of at least 180 at 500mA, 2V

High frequency transition (fT) of 100MHz

Product Advantages

Robust design for harsh environments

High reliability and long lifespan

Efficient power handling for high-current applications

Suitable for a variety of automotive and industrial uses

Key Technical Parameters

Collector-Emitter Breakdown Voltage (BVCEO): 100V

Collector Current (IC): 3A

Collector-Emitter Saturation Voltage (VCE(sat)): 400mV @ 300mA, 3A

Current Gain (hFE): 180 @ 500mA, 2V

Transition Frequency (fT): 100MHz

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

DPAK package for efficient heat dissipation

Compatibility

Surface mount DPAK package

Compatible with a variety of automotive and industrial circuits

Application Areas

Automotive electronics (e.g. motor drives, power management)

Industrial equipment (e.g. power supplies, motor controls)

Product Lifecycle

Current production model, no plans for discontinuation

Replacement and upgrade options available from onsemi

Key Reasons to Choose This Product

Robust and reliable performance in harsh environments

Efficient power handling for high-current applications

Wide operating temperature range and AEC-Q101 qualification

Compatibility with various automotive and industrial circuits

Availability of replacement and upgrade options from the manufacturer