Manufacturer Part Number
NSV12200LT1G
Manufacturer
onsemi
Introduction
The NSV12200LT1G is a PNP bipolar junction transistor (BJT) from onsemi designed for automotive and other high-reliability applications.
Product Features and Performance
Automotive-grade AEC-Q101 qualified
Operates over a wide temperature range of -55°C to 150°C
Power rating of 540mW
Collector-emitter breakdown voltage of 12V
Collector current up to 2A
Collector cutoff current of 100nA maximum
Vce saturation voltage of 180mV at 200mA, 2A
DC current gain of 250 minimum at 500mA, 2V
Transition frequency of 100MHz
Product Advantages
Robust and reliable performance for automotive and industrial applications
Wide operating temperature range
High power and current handling capabilities
Low saturation voltage for efficient operation
High current gain and transition frequency
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 12V
Current Collector (Ic) (Max): 2A
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency Transition: 100MHz
Quality and Safety Features
RoHS3 compliant
AEC-Q101 automotive-grade qualification
Compatibility
Surface mount SOT-23-3 (TO-236) package
Suitable for tape and reel packaging
Application Areas
Automotive electronics
Industrial control systems
Power supplies
Switching circuits
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi or other manufacturers.
Key Reasons to Choose This Product
Robust and reliable performance for demanding applications
Wide operating temperature range for versatile use
High power and current handling capabilities for efficient operation
Low saturation voltage for energy-efficient designs
High current gain and transition frequency for fast switching
Automotive-grade qualification for high-reliability systems
RoHS3 compliance for environmentally friendly applications