Manufacturer Part Number
NSV1C301ET4G-VF01
Manufacturer
onsemi
Introduction
The NSV1C301ET4G-VF01 is a discrete semiconductor product, specifically a single bipolar junction transistor (BJT) in the NPN configuration.
Product Features and Performance
Voltage Collector Emitter Breakdown (Max): 100 V
Current Collector (Ic) (Max): 3 A
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency Transition: 120MHz
Product Advantages
High voltage and current handling capabilities
Low saturation voltage for efficient power conversion
High current gain for amplification applications
High transition frequency for high-speed switching
Key Technical Parameters
Manufacturer Part Number: NSV1C301ET4G-VF01
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Max: 2.1 W
Operating Temperature: -65°C ~ 150°C (TJ)
Quality and Safety Features
RoHS3 Compliant
DPAK Packaging for surface mount applications
Compatibility
Suitable for a wide range of electronic circuits and systems requiring a high-performance bipolar junction transistor
Application Areas
Power amplifiers
Switching circuits
Voltage regulators
Motor drivers
Audio/video equipment
Product Lifecycle
Currently available
No information on discontinuation or replacement plans
Several Key Reasons to Choose This Product
High voltage and current handling capabilities for power applications
Low saturation voltage for efficient power conversion
High current gain for amplification applications
High transition frequency for high-speed switching
RoHS compliance and DPAK packaging for surface mount integration