Manufacturer Part Number
NSV1C200MZ4T1G
Manufacturer
onsemi
Introduction
High-voltage, high-current PNP bipolar junction transistor (BJT)
Suitable for use in power switching and amplifier applications
Product Features and Performance
High voltage rating up to 100V
High current capability up to 2A
High transition frequency of 120MHz
Low collector-emitter saturation voltage of 220mV @ 200mA, 2A
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent performance in power switching and amplifier circuits
Compact SOT-223 (TO-261) surface mount package
RoHS-3 compliant
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 100V
Collector Current (IC): 2A
DC Current Gain (hFE): 120 min @ 500mA, 2V
Transition Frequency (fT): 120MHz
Quality and Safety Features
Compliant with RoHS-3 environmental regulations
Reliable performance and long lifespan
Compatibility
Suitable for use in a wide range of electronic devices and power circuits
Application Areas
Power switching circuits
Power amplifiers
Motor control
Industrial electronics
Product Lifecycle
Current production, no plans for discontinuation
Replacement or upgrade options available if needed
Several Key Reasons to Choose This Product
High voltage and current capability for demanding power applications
Excellent high-frequency performance for efficient switching and amplification
Compact and RoHS-compliant package for convenient integration
Reliable and long-lasting operation in a wide temperature range