NSV1C201MZ4T1G - onsemi

Manufacturer Part Number

NSV1C201MZ4T1G

Manufacturer

onsemi

Introduction

High voltage, high power NPN bipolar junction transistor

Product Features and Performance

Capable of handling up to 800 mW of power

Withstands up to 100 V collector-emitter voltage

Supports up to 2 A of collector current

Low collector-emitter saturation voltage of 180 mV at 200 mA, 2 A

Minimum DC current gain of 120 at 500 mA, 2 V

Transition frequency of 100 MHz

Product Advantages

Robust high voltage and high power handling capabilities

Low saturation voltage for efficient power conversion

High current gain for driving high power loads

High frequency performance for fast switching applications

Key Technical Parameters

Collector-Emitter Voltage (VCEO): 100 V

Collector Current (IC): 2 A

Power Dissipation: 800 mW

DC Current Gain (hFE): 120 (min)

Transition Frequency (fT): 100 MHz

Quality and Safety Features

RoHS3 compliant

Packaged in a space-saving SOT-223 (TO-261) surface mount package

Compatibility

Compatible with a variety of high power, high voltage electronic circuit designs

Application Areas

Switching power supplies

Motor drives

Industrial control systems

Automotive electronics

Product Lifecycle

This product is an active and widely available part from onsemi

Replacements and upgrades are readily available

Key Reasons to Choose This Product

Excellent power handling and voltage capabilities

High current gain and fast switching performance

Space-saving surface mount packaging

RoHS compliance for environmentally friendly usage

Proven reliability and wide availability from a trusted manufacturer