Manufacturer Part Number
NSV1C200LT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
RoHS3 Compliant
Product Features and Performance
Power Rating: 490mW
Collector-Emitter Breakdown Voltage: 100V
Collector Current: 2A
Collector Cutoff Current: 100nA
Collector-Emitter Saturation Voltage: 250mV @ 200mA, 2A
DC Current Gain: 120 @ 500mA, 2V
Transition Frequency: 120MHz
Operating Temperature: -55°C to 150°C
Product Advantages
High power handling capability
Wide voltage and current range
High frequency operation
Wide temperature range
Key Technical Parameters
Package: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Packaging: Tape & Reel
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuits and systems requiring a high-performance PNP bipolar junction transistor
Application Areas
Amplifiers
Switches
Regulators
Power supplies
Audio circuits
General-purpose electronic circuits
Product Lifecycle
Currently in production
Replacement or upgrade parts available from the manufacturer
Key Reasons to Choose This Product
Excellent power handling and voltage/current capability
High frequency performance
Wide operating temperature range
Industry-standard packaging and mounting
RoHS compliance for environmental safety
Reliable manufacturer support and product availability