Manufacturer Part Number
NSV1C300ET4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
DPAK Package
Operating Temperature: -65°C to 150°C
Power Rating: 2.1 W
Collector-Emitter Breakdown Voltage: 100 V
Collector Current: 3 A
Collector Cutoff Current: 100 nA
Collector-Emitter Saturation Voltage: 400 mV @ 300 mA, 3 A
DC Current Gain: 120 @ 1 A, 2 V
Transition Frequency: 100 MHz
Surface Mount Mounting
Product Advantages
Compact DPAK package
High power and voltage handling
High current capability
Wide operating temperature range
Key Technical Parameters
Voltage: 100 V
Current: 3 A
Power: 2.1 W
DC Current Gain: 120
Transition Frequency: 100 MHz
Quality and Safety Features
RoHS3 Compliant
Suitable for high-reliability applications
Compatibility
Compatible with various electronic circuits and systems requiring high-power, high-voltage bipolar transistors
Application Areas
Power amplifiers
Motor drives
Inverters
Switching regulators
General-purpose high-power switching applications
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement/upgrade options available from the manufacturer
Key Reasons to Choose This Product
High power and voltage handling capability
High current capacity
Wide operating temperature range
Compact DPAK package
RoHS3 compliance for use in various applications
Proven reliability and performance in the market