NSV1C201LT1G - onsemi

Manufacturer Part Number

NSV1C201LT1G

Manufacturer

onsemi

Introduction

High-voltage, high-current NPN transistor for general-purpose applications

Product Features and Performance

High voltage capability up to 100V

High current capability up to 2A

High current gain (hFE) of 120 minimum

High transition frequency of 110MHz

Low collector-emitter saturation voltage of 150mV at 2A

Product Advantages

Excellent performance in high-voltage, high-current applications

Suitable for a wide range of general-purpose uses

Compact surface-mount package for efficient board layout

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 100V

Collector Current (IC): 2A

Collector Cutoff Current (ICBO): 100nA

DC Current Gain (hFE): 120 minimum

Transition Frequency (fT): 110MHz

Collector-Emitter Saturation Voltage (VCE(sat)): 150mV

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Can be used as a replacement or upgrade for similar NPN transistors in various electronic circuits and applications

Application Areas

General-purpose amplifier and switching applications

Power supplies

Motor controls

Industrial and consumer electronics

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacements and upgrades may become available in the future as technology evolves

Key Reasons to Choose This Product

High voltage and current handling capability

Excellent high-frequency performance

Low saturation voltage for efficient power conversion

Compact surface-mount package for space-saving designs

RoHS3 compliance for use in environmentally-conscious applications

Proven reliability and performance in a wide range of general-purpose applications