Manufacturer Part Number
NSV40200LT1G
Manufacturer
onsemi
Introduction
The NSV40200LT1G is a discrete semiconductor product, specifically a PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package.
Product Features and Performance
Operates at a maximum collector-emitter voltage of 40V
Supports a maximum collector current of 2A
Exhibits a minimum DC current gain (hFE) of 220 at 500mA and 2V
Provides a transition frequency of 100MHz
Capable of dissipating up to 460mW of power
Supports an operating temperature range of -55°C to 150°C
Product Advantages
Compact and space-efficient SOT-23-3 (TO-236) package
Suitable for a wide range of applications due to its performance characteristics
Compliant with RoHS3 environmental regulations
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 40V
Collector Current (Max): 2A
Collector Cutoff Current (Max): 100nA
VCE Saturation Voltage (Max): 170mV @ 200mA, 2A
DC Current Gain (Min): 220 @ 500mA, 2V
Transition Frequency: 100MHz
Power Dissipation (Max): 460mW
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable and durable performance
Compatibility
The NSV40200LT1G is a direct replacement for various PNP bipolar transistors in SOT-23-3 (TO-236) packages.
Application Areas
Suitable for a wide range of applications, including power supplies, amplifiers, switches, and other electronic circuits.
Product Lifecycle
The NSV40200LT1G is an actively supported and readily available product from onsemi.
Several Key Reasons to Choose This Product
High-performance PNP bipolar transistor with a maximum collector-emitter voltage of 40V and a maximum collector current of 2A
Compact and space-efficient SOT-23-3 (TO-236) package
Compliant with RoHS3 environmental regulations for sustainable and eco-friendly use
Reliable and durable performance across a wide operating temperature range of -55°C to 150°C
Suitable for a variety of applications, including power supplies, amplifiers, and switches