Manufacturer Part Number
NSV40302PDR2G
Manufacturer
onsemi
Introduction
NPN and PNP general-purpose bipolar junction transistor (BJT) array.
Product Features and Performance
-55°C to 150°C operating temperature range
653mW maximum power dissipation
40V maximum collector-emitter breakdown voltage
3A maximum collector current
100nA maximum collector cutoff current
115mV maximum collector-emitter saturation voltage at 200mA, 2A
180 minimum DC current gain at 1A, 2V
100MHz transition frequency
Product Advantages
High power and current handling capability
High voltage and frequency operation
Low saturation voltage for efficient switching
Compact 8-SOIC surface mount package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 40V
Current Collector (Ic) (Max): 3A
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency Transition: 100MHz
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for surface mount applications
Application Areas
General-purpose amplifier and switching circuits
Power management and control systems
Industrial and consumer electronics
Product Lifecycle
Currently available
No known discontinuation or replacement plans
Key Reasons to Choose This Product
High performance and reliability in a compact package
Versatile compatibility for a wide range of applications
Competitive pricing and availability from a trusted manufacturer
Compliance with RoHS environmental regulations