NSV60200LT1G - onsemi

Manufacturer Part Number

NSV60200LT1G

Manufacturer

onsemi

Introduction

NPN Bipolar Junction Transistor (BJT)

Product Features and Performance

High Collector-Emitter Breakdown Voltage (60V)

High Collector Current (2A)

Low Collector-Emitter Saturation Voltage (220mV @ 2A)

High Current Gain (150 @ 500mA, 2V)

High Transition Frequency (100MHz)

Wide Operating Temperature Range (-55°C to 150°C)

Product Advantages

Suitable for high-voltage, high-current switching and amplifier applications

Robust design for reliable operation

Compact surface-mount package (SOT-23-3)

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 60V

Collector Current (Max): 2A

Collector-Emitter Saturation Voltage: 220mV @ 2A

DC Current Gain: 150 @ 500mA, 2V

Transition Frequency: 100MHz

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 Compliant

Reliable and robust design for industrial and automotive applications

Compatibility

Suitable for various high-power, high-voltage switching and amplifier circuits

Application Areas

Power supplies

Motor drives

Switching regulators

Amplifiers

Inverters

Automotive electronics

Product Lifecycle

This product is an active part and not nearing discontinuation.

Replacement or upgrade options are available from onsemi for this product.

Key Reasons to Choose This Product

High performance and reliability for demanding applications

Compact surface-mount package for space-constrained designs

Wide operating temperature range for industrial and automotive use

RoHS3 compliance for environmentally-friendly applications

Readily available from onsemi with existing replacement options