NSV60600MZ4T1G - onsemi

Manufacturer Part Number

NSV60600MZ4T1G

Manufacturer

onsemi

Introduction

This is a PNP bipolar junction transistor (BJT) from onsemi, designed for a variety of power electronics and amplifier applications.

Product Features and Performance

Operating temperature range of -55°C to 150°C

Power rating of 800 mW

Collector-emitter breakdown voltage of 60 V

Collector current of up to 6 A

Collector cutoff current of max 100 nA

Collector-emitter saturation voltage of 350 mV @ 600 mA, 6 A

DC current gain of min 120 @ 1 A, 2 V

Transition frequency of 100 MHz

Product Advantages

Robust and reliable performance across wide operating temperature range

High-power handling capability

Low saturation voltage for efficient power conversion

Suitable for various power electronics and amplifier applications

Key Technical Parameters

Collector-emitter breakdown voltage: 60 V

Collector current: 6 A

Collector cutoff current: 100 nA

Collector-emitter saturation voltage: 350 mV

DC current gain: 120 min

Transition frequency: 100 MHz

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Surface mount SOT-223 (TO-261) package

Suitable for Tape & Reel (TR) packaging

Application Areas

Power electronics circuits

Audio amplifiers

Switching power supplies

Motor control systems

Product Lifecycle

Currently in active production

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Reliable high-power performance across wide temperature range

Low saturation voltage for efficient power conversion

Suitable for a variety of power electronics and amplifier applications

Manufactured to high quality standards with RoHS3 compliance