Manufacturer Part Number
NSV60601MZ4T3G
Manufacturer
onsemi
Introduction
High-power NPN bipolar junction transistor for general-purpose applications
Product Features and Performance
High current handling capability up to 6A
Low collector-emitter saturation voltage (300mV @ 6A)
High DC current gain (hFE > 120 @ 1A, 2V)
Wide operating temperature range (-55°C to 150°C)
Fast switching speed with 100MHz transition frequency
Product Advantages
Robust and reliable performance
Efficient power handling
Versatile application use
Key Technical Parameters
Power Rating: 800mW
Collector-Emitter Breakdown Voltage: 60V
Collector Current (Max): 6A
Collector Cutoff Current: 100nA
DC Current Gain: 120 minimum
Quality and Safety Features
RoHS3 Compliant
Suitable for high-temperature and high-current applications
Compatibility
Surface mount SOT-223 (TO-261) package
Compatible with standard PCB assembly processes
Application Areas
Power amplifiers
Motor controls
Switching regulators
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
High-performance and reliable operation
Efficient power handling capabilities
Versatile applications in various electronic systems
Robust design for demanding environments
Compliance with industry safety and environmental standards