Manufacturer Part Number
NSV60601MZ4T1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
SOT-223 (TO-261) Package
Operating Temperature: -55°C to 150°C
Power Rating: 800 mW
Collector-Emitter Breakdown Voltage: 60 V
Collector Current: 6 A
Collector Cutoff Current: 100 nA
Collector-Emitter Saturation Voltage: 300 mV @ 600 mA, 6 A
DC Current Gain: 120 min @ 1 A, 2 V
Transition Frequency: 100 MHz
Product Advantages
Compact surface mount package
High power and current handling capability
Wide operating temperature range
RoHS3 compliance for environmental friendliness
Key Technical Parameters
Package: TO-261-4, TO-261AA, SOT-223 (TO-261)
Packaging: Tape & Reel (TR)
Transistor Type: NPN
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a variety of electronic applications requiring a high-power, high-current NPN bipolar junction transistor
Application Areas
Power amplifiers
Switching circuits
Motor controls
Industrial electronics
Product Lifecycle
Current product offering, no indication of discontinuation
Key Reasons to Choose This Product
High power and current handling capability
Wide operating temperature range
Compact surface mount package
RoHS3 compliance for environmental friendliness
Suitable for a variety of high-power electronic applications