NSV60600MZ4T3G - onsemi

Manufacturer Part Number

NSV60600MZ4T3G

Manufacturer

onsemi

Introduction

High-performance PNP bipolar junction transistor (BJT) in a SOT-223 package.

Product Features and Performance

Supports collector-emitter voltages up to 60V

Supports collector currents up to 6A

Transition frequency of 100MHz

DC current gain of at least 120 at 1A, 2V

Saturation voltage of 350mV at 600mA, 6A

Operating temperature range of -55°C to 150°C

Product Advantages

High power handling capabilities

High-speed switching performance

Small, surface-mount package

Wide operating temperature range

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 60V

Current Collector (Ic) (Max): 6A

Current Collector Cutoff (Max): 100nA

Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A

DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V

Frequency Transition: 100MHz

Quality and Safety Features

RoHS3 compliant

Reliable performance in wide temperature range

Compatibility

Suitable for surface mount applications

Application Areas

Power amplifiers

Switching circuits

Drivers for motors, relays, and other loads

Product Lifecycle

Currently available

No information on upcoming discontinuation or replacements

Several Key Reasons to Choose This Product

High power handling and switching capabilities

Compact surface-mount package

Wide operating temperature range

Reliable performance and RoHS3 compliance