NSV60201LT1G - onsemi

Manufacturer Part Number

NSV60201LT1G

Manufacturer

onsemi

Introduction

A high-performance NPN bipolar junction transistor (BJT) suitable for a wide range of switching and amplifying applications.

Product Features and Performance

Optimized for high-speed switching and amplifying

High current handling capability up to 2A

Excellent frequency response up to 100MHz

Low collector-emitter saturation voltage of 140mV @ 2A

Wide operating temperature range from -55°C to 150°C

Product Advantages

Reliable performance in demanding applications

Efficient power handling and thermal management

Flexible compatibility for various circuit designs

Robust construction for long-term reliability

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 60V

Collector Current (IC): 2A

DC Current Gain (hFE): 150 min @ 1A, 2V

Transition Frequency (fT): 100MHz

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Suitable for industrial, automotive, and consumer applications

Rigorous quality control and testing for consistent performance

Compatibility

Compatible with standard SOT-23-3 (TO-236) surface mount package

Can be used in a wide range of analog and digital circuits

Application Areas

Switching power supplies

DC-DC converters

Motor control circuits

Audio amplifiers

General-purpose amplifying and switching applications

Product Lifecycle

Currently in active production

Availability of replacement or upgraded parts from the manufacturer

Several Key Reasons to Choose This Product

Excellent performance characteristics for high-speed, high-current applications

Reliable and durable construction for long-term usage

Flexible compatibility and versatility in circuit design

Competitive pricing and availability from a reputable manufacturer

Compliance with environmental standards for sustainable use