NSV40501UW3T2G - onsemi

Manufacturer Part Number

NSV40501UW3T2G

Manufacturer

onsemi

Introduction

High-voltage, high-current NPN bipolar junction transistor (BJT) in a compact 3-WDFN (2x2) package.

Product Features and Performance

High voltage capability up to 40V

High current handling up to 5A

High power dissipation up to 875mW

Wide operating temperature range from -55°C to 150°C

Fast transition frequency of 150MHz

High DC current gain of at least 200 at 2A and 2V

Product Advantages

Compact 3-WDFN (2x2) surface mount package

Excellent power handling and thermal performance

Suitable for high-power switching and amplifier applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 40V

Current Collector (Ic) (Max): 5A

Current Collector Cutoff (Max): 100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 150mV @ 400mA, 4A

DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V

Frequency Transition: 150MHz

Quality and Safety Features

RoHS3 compliant

Reliable performance in wide temperature range

Compatibility

Suitable for surface mount applications

Application Areas

High-power switching circuits

Power amplifiers

Motor drives

Power supplies

Industrial controls

Product Lifecycle

Currently in production

No planned discontinuation or replacement

Several Key Reasons to Choose This Product

High voltage and current handling capabilities

Excellent power dissipation and thermal performance

Fast transition frequency for high-speed applications

Compact surface mount package for space-constrained designs

RoHS3 compliance for environmentally-conscious applications