Manufacturer Part Number
NSS1C201MZ4T1G
Manufacturer
onsemi
Introduction
NPN Bipolar Junction Transistor (BJT)
Product Features and Performance
Capable of handling up to 2A of collector current
100V collector-emitter breakdown voltage
100MHz transition frequency
Low VCE saturation voltage of 180mV @ 200mA, 2A
Minimum DC current gain (hFE) of 120 @ 500mA, 2V
Product Advantages
High power handling capability
Wide operating voltage range
Fast switching speed
Low on-state voltage drop
High current gain
Key Technical Parameters
Collector-Emitter Voltage (VCEO): 100V
Collector Current (IC): 2A
Power Dissipation (PD): 800mW
Transition Frequency (fT): 100MHz
DC Current Gain (hFE): 120 min @ 500mA, 2V
Quality and Safety Features
RoHS3 compliant
Reliable performance in -55°C to 150°C operating temperature range
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Switching circuits
Amplifier circuits
Power management applications
Motor control
Industrial electronics
Product Lifecycle
This product is currently in production and available for purchase
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent power handling capability
Wide operating voltage range
Fast switching speed for efficient circuit performance
Low on-state voltage drop for improved energy efficiency
High current gain for versatile applications