NSS12200LT1G - onsemi

Manufacturer Part Number

NSS12200LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

Compact SOT-23-3 (TO-236) package

Wide operating temperature range: -55°C to 150°C

High power handling capability: 460mW

High voltage rating: 12V Collector-Emitter Breakdown Voltage

High collector current rating: 2A

Low collector cutoff current: 100nA

Low collector-emitter saturation voltage: 180mV @ 200mA, 2A

High DC current gain: 250 @ 500mA, 2V

High transition frequency: 100MHz

Product Advantages

Excellent power handling and high current capability

Wide temperature operating range

Compact and space-saving package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 12V

Collector Current (Max): 2A

Collector Cutoff Current (Max): 100nA

Collector-Emitter Saturation Voltage (Max): 180mV

DC Current Gain (Min): 250

Transition Frequency: 100MHz

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount package (SOT-23-3)

Application Areas

General-purpose amplifier and switching applications

Power management circuits

Industrial and consumer electronics

Product Lifecycle

This is an active product, not nearing discontinuation.

Replacements and upgrades may be available from the manufacturer.

Key Reasons to Choose This Product

Excellent power handling and high current capability

Wide operating temperature range

Compact and space-saving package

High voltage and current ratings

Low collector-emitter saturation voltage

High DC current gain and transition frequency

RoHS3 compliance for environmental safety