NSS12100M3T5G - onsemi

Manufacturer Part Number

NSS12100M3T5G

Manufacturer

onsemi

Introduction

High-power PNP bipolar junction transistor suitable for power amplifier and switching applications.

Product Features and Performance

Operating temperature range of -55°C to 150°C

Power dissipation of 625 mW

Collector-emitter breakdown voltage of 12 V

Collector current (max) of 1 A

Collector cutoff current (max) of 100 nA

Collector-emitter saturation voltage (max) of 410 mV at 100 mA, 1 A

DC current gain (min) of 120 at 500 mA, 2 V

Product Advantages

Robust power handling capabilities

High temperature operation

Low saturation voltage for efficient power conversion

High current gain for driving high-current loads

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 12 V

Current Collector (Ic) (Max): 1 A

Current Collector Cutoff (Max): 100 nA

Vce Saturation (Max) @ Ib, Ic: 410 mV @ 100 mA, 1 A

DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500 mA, 2 V

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering in tape and reel packaging

Compatibility

Designed for surface mount applications

Compatible with standard SOT-723 footprint

Application Areas

Power amplifiers

Switching circuits

High-current driver applications

Product Lifecycle

The NSS12100M3T5G is an active product and is not nearing discontinuation.

Replacement or upgraded products may become available in the future, but no specific information is provided.

Several Key Reasons to Choose This Product

Robust power handling capabilities with 625 mW power dissipation

Wide operating temperature range of -55°C to 150°C

High current gain of 120 for efficient driving of high-current loads

Low collector-emitter saturation voltage for efficient power conversion

RoHS3 compliance and suitable for automated reflow soldering