Manufacturer Part Number
NSS1C200LT1G
Manufacturer
onsemi
Introduction
The NSS1C200LT1G is a high-voltage PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package, designed for use in a variety of power management and switching applications.
Product Features and Performance
High voltage capability up to 100V
High collector current rating up to 2A
High DC current gain (hFE) of 120 minimum
High transition frequency of 120MHz
Low collector-emitter saturation voltage (Vce Sat) of 250mV at 2A collector current
Wide operating temperature range of -55°C to 150°C
Product Advantages
Reliable and robust performance
Compact and space-saving SOT-23-3 package
Suitable for high-voltage and high-current applications
Excellent switching and amplification characteristics
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 100V
Current Collector (Ic) (Max): 2A
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency Transition: 120MHz
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Compatible with various power management and switching applications
Application Areas
Power supplies
Motor drives
Voltage regulators
Audio amplifiers
Industrial control systems
Product Lifecycle
The NSS1C200LT1G is an active product and is not nearing discontinuation. Replacement or upgraded options are available from the manufacturer if required.
Key Reasons to Choose This Product
High voltage and current capability
Excellent switching and amplification performance
Compact and space-saving package
Wide operating temperature range
Reliable and robust design
RoHS3 compliance for environmental responsibility
Compatibility with various power management and switching applications