Manufacturer Part Number
NSS1C300ET4G
Manufacturer
onsemi
Introduction
The NSS1C300ET4G is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of power management and switching applications.
Product Features and Performance
High collector-emitter breakdown voltage of 100V
High collector current rating of 3A
Low collector-emitter saturation voltage of 400mV at 3A
High DC current gain of 120 at 1A, 2V
High transition frequency of 100MHz
Wide operating temperature range of -65°C to 150°C
Product Advantages
Excellent power handling capabilities
High efficiency and reliability
Compact DPAK surface mount packaging
Suitable for high-frequency and high-voltage applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 100V
Collector Current (IC): 3A
Collector-Emitter Saturation Voltage (VCE(SAT)): 400mV
DC Current Gain (hFE): 120
Transition Frequency (fT): 100MHz
Operating Temperature Range: -65°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable DPAK packaging
Compatibility
The NSS1C300ET4G is compatible with a wide range of power management and switching applications, including:
DC-DC converters
Motor drives
Power supplies
Inverters
Switching regulators
Application Areas
Power management
Motor control
Inverters
Switching regulators
General-purpose power switching
Product Lifecycle
The NSS1C300ET4G is an active product and is not nearing discontinuation. Replacement or upgrade options are available from onsemi.
Several Key Reasons to Choose This Product
High power handling capabilities with a 3A collector current rating and 100V collector-emitter breakdown voltage.
Excellent efficiency and reliability with low collector-emitter saturation voltage and high DC current gain.
Compact and reliable DPAK surface mount packaging suitable for high-frequency and high-voltage applications.
Wide operating temperature range of -65°C to 150°C, making it suitable for a variety of environmental conditions.
RoHS3 compliance ensuring environmental friendliness and safety.