NSS20300MR6T1G - onsemi

Manufacturer Part Number

NSS20300MR6T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors Bipolar (BJT) Single

Product Features and Performance

RoHS3 Compliant

6-TSOP Manufacturer's packaging

SOT-23-6 Thin, TSOT-23-6 Package / Case

Tape & Reel (TR) Package

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 545 mW

Voltage Collector Emitter Breakdown (Max): 20 V

Current Collector (Ic) (Max): 3 A

Current Collector Cutoff (Max): 100nA

Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A

Transistor Type: PNP

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V

Frequency Transition: 100MHz

Surface Mount Mounting Type

Product Advantages

RoHS3 Compliant

Wide Operating Temperature Range

High Power Handling Capability

High Current Capacity

Low Collector-Emitter Saturation Voltage

Good DC Current Gain

High Transition Frequency

Key Technical Parameters

Power Max: 545 mW

Voltage Collector Emitter Breakdown (Max): 20 V

Current Collector (Ic) (Max): 3 A

Current Collector Cutoff (Max): 100nA

Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V

Frequency Transition: 100MHz

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting Type

Application Areas

Suitable for a wide range of electronic applications requiring high-performance PNP bipolar transistors

Product Lifecycle

Current production, no indication of discontinuation

Several Key Reasons to Choose This Product

RoHS3 Compliant

Wide Operating Temperature Range (-55°C ~ 150°C)

High Power Handling Capability (545 mW)

High Current Capacity (3 A)

Low Collector-Emitter Saturation Voltage (320mV @ 20mA, 2A)

Good DC Current Gain (100 @ 1.5A, 2V)

High Transition Frequency (100MHz)

Surface Mount Compatibility