Manufacturer Part Number
NSS20200LT1G
Manufacturer
onsemi
Introduction
High-speed PNP bipolar junction transistor (BJT)
Suitable for various switching and amplifier applications
Product Features and Performance
High DC current gain (hFE)
High transition frequency (fT)
Low collector-emitter saturation voltage (VCE(sat))
Low collector-emitter breakdown voltage (VCEO)
Wide operating temperature range (-55°C to 150°C)
Excellent thermal stability
Product Advantages
Efficient power handling
Fast switching speed
Reliable performance across a wide temperature range
Compact surface mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 20V
Collector Current (IC): 2A
Power Dissipation: 460mW
DC Current Gain (hFE): 250 (min) @ 500mA, 2V
Transition Frequency (fT): 100MHz
Quality and Safety Features
RoHS3 compliant
Robust package design for reliable operation
Compatibility
Suitable for various switching and amplifier applications in electronic circuits
Application Areas
Switching power supplies
DC-DC converters
Inverters
Audio amplifiers
General-purpose amplifier and switching circuits
Product Lifecycle
This product is an active and widely available component
Replacements and upgrades are readily accessible
Key Reasons to Choose This Product
Excellent high-frequency performance
Efficient power handling capability
Wide operating temperature range
Reliable and robust design
Compact surface mount package for space-constrained applications