NSS20101JT1G - onsemi

Manufacturer Part Number

NSS20101JT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product - Transistor (Bipolar)

Product Features and Performance

Operating Temperature Range: -55°C to 150°C

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage: 20 V

Collector Current (Max): 1 A

Collector Cutoff Current: 100 nA

Collector-Emitter Saturation Voltage: 220 mV @ 100 mA, 1 A

DC Current Gain: 200 min @ 100 mA, 2 V

Transition Frequency: 350 MHz

Product Advantages

High power handling capability

Low collector-emitter saturation voltage

High transition frequency

Wide operating temperature range

Key Technical Parameters

Transistor Type: NPN

Mounting Type: Surface Mount

Package: SC-89, SOT-490

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic circuits and applications that require a high-performance NPN bipolar transistor.

Application Areas

Amplifiers

Switches

Drivers

Logic Gates

General-purpose electronics

Product Lifecycle

This product is currently in production and widely available. There are no immediate plans for discontinuation, and replacement or upgrade options may be available.

Key Reasons to Choose This Product

High power handling and efficiency

Low saturation voltage for improved energy efficiency

High transition frequency for high-speed applications

Wide operating temperature range for versatile use

Surface mount package for compact design integration