NSS1C201LT1G - onsemi

Manufacturer Part Number

NSS1C201LT1G

Manufacturer

onsemi

Introduction

The NSS1C201LT1G is a high-voltage, high-current NPN bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package.

Product Features and Performance

High voltage capability (100V collector-emitter breakdown voltage)

High current capability (2A collector current)

High DC current gain (120 minimum)

High transition frequency (110MHz)

Surface mount package

Product Advantages

Compact and space-saving SOT-23-3 package

Suitable for high-voltage, high-current applications

Provides high performance in a small footprint

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 100V

Current Collector (Ic) (Max): 2A

Current Collector Cutoff (Max): 100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A

DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V

Frequency Transition: 110MHz

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering in tape and reel packaging

Compatibility

Surface mount (SMD) package

Compatible with standard SMT assembly processes

Application Areas

High-voltage, high-current switching and amplification circuits

Power electronics applications

Industrial control and automation

Automotive electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacements and upgrades may be available in the future as technology advances.

Key Reasons to Choose This Product

High voltage and current capabilities for demanding applications

Compact and space-saving SMD package

High performance specifications, including high DC current gain and transition frequency

RoHS3 compliance for environmental responsibility

Suitability for standard SMT assembly processes