NSS12201LT1G - onsemi

Manufacturer Part Number

NSS12201LT1G

Manufacturer

onsemi

Introduction

High-performance NPN bipolar junction transistor (BJT) suitable for a variety of amplifier and switching applications.

Product Features and Performance

Capable of operating up to 150°C junction temperature

High current handling capability up to 2A

High current gain (hFE) of at least 200 at 500mA, 2V

Transition frequency of 150MHz

Low collector-emitter saturation voltage (VCE(sat)) of 90mV at 200mA, 2A

Product Advantages

Robust design for high-temperature applications

Efficient power handling for high-current circuits

Excellent current gain for signal amplification

High-speed performance for fast switching

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 12V

Collector Cutoff Current (ICBO): Max 100nA

Power Dissipation: 460mW

Quality and Safety Features

RoHS3 compliant

Reliable performance in industrial environments

Suitable for reflow soldering in surface mount applications

Compatibility

Compatible with a variety of amplifier and switching circuit designs

Application Areas

Power amplifiers

Switching circuits

Industrial control systems

Automotive electronics

Product Lifecycle

This product is an active and commonly used BJT transistor.

Replacements and upgrades may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

Robust high-temperature operation

Efficient high-current handling capability

Excellent current gain for signal amplification

High-speed performance for fast switching applications

Reliable and RoHS-compliant design for industrial use