NSS1C301ET4G - onsemi

Manufacturer Part Number

NSS1C301ET4G

Manufacturer

onsemi

Introduction

High-voltage, high-current NPN bipolar junction transistor (BJT) for general-purpose switching and amplification applications.

Product Features and Performance

High voltage rating: Up to 100V collector-emitter breakdown voltage

High current capability: Up to 3A collector current

High transition frequency: 120MHz

Low collector-emitter saturation voltage: 250mV at 300mA, 3A

Wide operating temperature range: -65°C to 150°C

Product Advantages

Robust performance in high-voltage, high-current applications

Suitable for a wide range of switching and amplification needs

Compact DPAK surface mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 100V

Collector Current (Max): 3A

DC Current Gain (hFE) (Min): 120 @ 1A, 2V

Transition Frequency: 120MHz

Power Dissipation (Max): 2.1W

Operating Temperature Range: -65°C to 150°C

Quality and Safety Features

RoHS3 compliant

Suitable for industrial and commercial applications

Compatibility

Fits standard DPAK (TO-252-3) surface mount footprint

Application Areas

General-purpose switching and amplification circuits

Power supplies, motor drivers, and other high-voltage, high-current applications

Product Lifecycle

This product is currently in production and readily available.

Replacement or upgraded options may become available in the future as technology advances.

Key Reasons to Choose This Product

Robust performance in high-voltage, high-current applications

Wide operating temperature range and power dissipation capability

Compact and easy-to-use surface mount DPAK package

Reliable and RoHS3 compliant for industrial and commercial use