NSS1C200MZ4T1G - onsemi

Manufacturer Part Number

NSS1C200MZ4T1G

Manufacturer

onsemi

Introduction

High-performance PNP bipolar junction transistor (BJT) in a small-footprint surface-mount package.

Product Features and Performance

Optimized for high-speed switching and amplification applications

Wide operating temperature range of -55°C to 150°C

High collector-emitter breakdown voltage of 100V

High collector current rating of 2A

Low collector-emitter saturation voltage of 220mV @ 2A collector current

High current gain of 120 minimum @ 500mA collector current

High transition frequency of 120MHz

Product Advantages

Compact surface-mount package for space-constrained designs

Excellent thermal performance and reliability

Suitable for a wide range of power electronic and amplification applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 100V

Collector Current (max): 2A

Collector-Emitter Saturation Voltage: 220mV @ 2A, 200mA base current

Current Gain (min): 120 @ 500mA, 2V

Transition Frequency: 120MHz

Quality and Safety Features

RoHS3 compliant

Reliable and durable performance

Compatibility

Surface-mount TO-261 (SOT-223) package

Application Areas

Power amplifiers

Switching power supplies

Motor drives

Industrial control systems

Consumer electronics

Product Lifecycle

Current production part

No known plans for discontinuation

Replacement or upgrade options available from onsemi

Key Reasons to Choose This Product

High-performance and reliable BJT for power electronics and amplification

Compact surface-mount package for space-constrained designs

Wide operating temperature range and excellent thermal performance

High voltage, current, and frequency capabilities

Cost-effective solution for a variety of applications