NSS12100UW3TCG - onsemi

Manufacturer Part Number

NSS12100UW3TCG

Manufacturer

onsemi

Introduction

The NSS12100UW3TCG is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of applications.

Product Features and Performance

Capable of operating at high power levels up to 740 mW

Wide operating temperature range of -55°C to 150°C

High collector-emitter breakdown voltage of 12 V

High collector current rating of up to 1 A

High DC current gain (hFE) of at least 100 at 500 mA collector current

Fast transition frequency of 200 MHz

Product Advantages

Excellent power handling capability

Reliable operation across a broad temperature range

Suitable for high-voltage and high-current applications

Fast switching performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 12 V

Collector Current (max): 1 A

Collector Cutoff Current (max): 100 nA

Collector-Emitter Saturation Voltage (max): 440 mV

DC Current Gain (min): 100 @ 500 mA, 2 V

Transition Frequency: 200 MHz

Quality and Safety Features

RoHS3 compliant

Surface mount 3-WDFN (2x2) package design for high-density PCB integration

Compatibility

This transistor is compatible with a wide range of electronic circuits and systems that require a high-performance PNP bipolar junction transistor.

Application Areas

Power amplifiers

Switch-mode power supplies

Audio/video amplifiers

Industrial and automotive electronics

Product Lifecycle

The NSS12100UW3TCG is an active product and is not nearing discontinuation. Replacement or upgrade options are available from the manufacturer.

Key Reasons to Choose This Product

Excellent power handling and thermal performance

Wide operating temperature range for reliable operation

High breakdown voltage and current rating for versatile applications

Fast switching speed for efficient circuit design

Compact surface mount package for space-constrained designs

RoHS3 compliance for environmental friendliness