NSS12100XV6T1G - onsemi

Manufacturer Part Number

NSS12100XV6T1G

Manufacturer

onsemi

Introduction

The NSS12100XV6T1G is a high-performance PNP bipolar junction transistor (BJT) designed for various electronic applications.

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

Low collector-emitter saturation voltage of 440mV @ 100mA, 1A

High collector current rating of 1A

Low collector cutoff current of 100nA (ICBO)

Minimum DC current gain (hFE) of 100 @ 500mA, 2V

Product Advantages

Excellent thermal performance

High reliability and stability

Compact surface mount package

Suitable for a wide range of applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 12V

Collector Current (Max): 1A

Collector Cutoff Current (Max): 100nA

DC Current Gain (hFE) (Min): 100 @ 500mA, 2V

Power Dissipation (Max): 500mW

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature and high-current applications

Compatibility

Compatible with various electronic circuits and systems

Application Areas

Power amplifiers

Switching circuits

Voltage regulators

Audio amplifiers

Industrial controls

Product Lifecycle

Currently available

No information on upcoming discontinuation or replacements

Several Key Reasons to Choose This Product

Excellent thermal and electrical performance

Compact and reliable surface mount package

Wide operating temperature range

Suitable for a variety of electronic applications

High reliability and stability