NSS20201LT1G - onsemi

Manufacturer Part Number

NSS20201LT1G

Manufacturer

onsemi

Introduction

NPN Bipolar Junction Transistor (BJT)

Product Features and Performance

2A Collector Current (Max)

20V Collector-Emitter Breakdown Voltage (Max)

460mW Power Dissipation (Max)

150MHz Transition Frequency

200 DC Current Gain (Min) @ 500mA, 2V

Product Advantages

Robust and reliable performance

High power handling capability

Suitable for a wide range of applications

Key Technical Parameters

Collector Current (Max): 2A

Collector-Emitter Breakdown Voltage (Max): 20V

Power Dissipation (Max): 460mW

Transition Frequency: 150MHz

DC Current Gain (Min): 200 @ 500mA, 2V

Quality and Safety Features

RoHS3 Compliant

Suitable for reflow soldering

Compatibility

Surface Mount (SMT) compatible

Suitable for Tape & Reel (TR) packaging

Application Areas

Power amplifiers

Switching circuits

Audio amplifiers

Industrial control systems

Product Lifecycle

This product is currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High power handling capability

Robust and reliable performance

Suitable for a wide range of applications

Meets RoHS3 compliance requirements

Surface mount and Tape & Reel packaging options