NSS30100LT1G - onsemi

Manufacturer Part Number

NSS30100LT1G

Manufacturer

onsemi

Introduction

The NSS30100LT1G is a high-performance PNP bipolar junction transistor (BJT) in a small SOT-23-3 package.

Product Features and Performance

High collector current capability up to 1A

Wide operating temperature range of -55°C to 150°C

High transition frequency of 100MHz

Low collector-emitter saturation voltage of 650mV @ 200mA, 2A

Minimum DC current gain of 100 @ 500mA, 2V

Product Advantages

Compact SOT-23-3 surface mount package

Excellent high frequency performance

Robust design for demanding applications

Compliant with RoHS3 requirements

Key Technical Parameters

Power Rating: 310mW

Collector-Emitter Breakdown Voltage: 30V

Collector Cutoff Current: 100nA

Transistor Type: PNP

Quality and Safety Features

RoHS3 compliant

Reliable and robust design for long-term use

Compatibility

Compatible with standard SOT-23-3 (TO-236) footprint

Application Areas

Analog and digital circuits

Power management

Switching and amplifier applications

Telecommunications

Industrial electronics

Product Lifecycle

Current product, no discontinuation planned

Replacements and upgrades available if needed

Key Reasons to Choose This Product

High current capability and excellent high frequency performance

Compact and reliable SOT-23-3 package

Wide operating temperature range

RoHS3 compliance for environmentally friendly applications

Availability of replacements and upgrades as needed