NSS40300DDR2G - onsemi

Manufacturer Part Number

NSS40300DDR2G

Manufacturer

onsemi

Introduction

High-performance dual PNP bipolar junction transistor (BJT) array in a compact 8-SOIC package.

Product Features and Performance

2 PNP transistors in a single package

High current handling capability up to 3A

Wide operating temperature range of -55°C to 150°C

High current gain (hFE) of 180 minimum at 1A, 2V

High transition frequency of 100MHz

Low collector-emitter saturation voltage (VCE(sat)) of 170mV at 200mA, 2A

Product Advantages

Compact surface mount package

High reliability and long lifespan

Suitable for a variety of applications requiring high-performance dual PNP transistors

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 40V

Collector Cutoff Current (ICBO): 100nA (max)

Power Dissipation: 653mW

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Reliable and durable design

Compatibility

Suitable for use in a wide range of electronic circuits and systems

Application Areas

Amplifiers

Switches

Drivers

Regulators

Power supplies

Product Lifecycle

This product is currently in production and available for purchase.

Replacement or upgraded models may be available in the future, but no specific information is provided.

Several Key Reasons to Choose This Product

Excellent performance characteristics, including high current handling, high current gain, and high transition frequency

Wide operating temperature range suitable for demanding applications

Compact surface mount package for efficient board space utilization

Reliable and durable design for long-lasting performance

RoHS3 compliance for environmental responsibility