Manufacturer Part Number
NSS40301MZ4T3G
Manufacturer
onsemi
Introduction
High voltage, high gain NPN silicon bipolar power transistor in a SOT-223 (TO-261) package.
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High collector-emitter breakdown voltage of 40V
High collector current capability up to 3A
High current gain of 200 minimum at 1A, 1V
High transition frequency of 215MHz
2W maximum power dissipation
Product Advantages
Compact surface mount package
Reliable performance in high power applications
Suitable for various industrial and consumer electronics
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 40V
Collector Current (Max): 3A
DC Current Gain (hFE) (Min): 200 @ 1A, 1V
Transition Frequency: 215MHz
Power Dissipation (Max): 2W
Quality and Safety Features
RoHS3 compliant
Reliable performance in wide temperature range
Compatibility
Compatible with various industrial and consumer electronic applications
Application Areas
Industrial electronics
Power supplies
Motor control
Consumer electronics
Product Lifecycle
Current production status
Availability of replacements or upgrades
Key Reasons to Choose This Product
High voltage and current capability
High current gain and transition frequency
Compact surface mount package
Wide operating temperature range
Reliable performance in high power applications