NSS60101DMTTBG - Fairchild Semiconductor

Manufacturer Part Number

NSS60101DMTTBG

Manufacturer

Fairchild (onsemi)

Introduction

Discrete Semiconductor Products

Transistors Bipolar (BJT) Arrays

Product Features and Performance

6-WDFN (2x2) package

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 2.27W

Voltage Collector Emitter Breakdown (Max): 60V

Current Collector (Ic) (Max): 1A

Current Collector Cutoff (Max): 100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A

Transistor Type: 2 NPN (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V

Frequency Transition: 180MHz

Product Advantages

Compact 6-WDFN (2x2) package

Wide operating temperature range

High power handling capability

High voltage and current ratings

Low saturation voltage

Dual NPN transistor configuration

Key Technical Parameters

Package: 6-WDFN Exposed Pad

Supplier Device Package: 6-WDFN (2x2)

Packaging: Bulk

Quality and Safety Features

Manufactured by a reputable semiconductor company (Fairchild/onsemi)

Meets industry standards for quality and safety

Compatibility

Surface mount technology (SMT) compatible

Application Areas

Suitable for a wide range of electronic circuit designs and applications

Useful in power management, amplification, switching, and control circuits

Product Lifecycle

Currently available and not nearing discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Compact and space-saving package

Wide operating temperature range

High power handling and voltage/current ratings

Low saturation voltage for improved efficiency

Dual NPN transistor configuration for design flexibility

Manufactured by a reputable semiconductor company