NSS60601MZ4T3G - onsemi

Manufacturer Part Number

NSS60601MZ4T3G

Manufacturer

onsemi

Introduction

The NSS60601MZ4T3G is a high-performance NPN bipolar junction transistor (BJT) designed for a wide range of applications.

Product Features and Performance

High current-handling capacity up to 6A

High frequency operation up to 100MHz

Low collector-emitter saturation voltage of 300mV @ 600mA, 6A

Wide operating temperature range of -55°C to 150°C

RoHS3 compliant

Product Advantages

Excellent thermal stability and reliability

Compact SOT-223 (TO-261) package

Suitable for high-power, high-frequency applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 60V

Collector Current (max): 6A

DC Current Gain (min): 120 @ 1A, 2V

Transition Frequency: 100MHz

Quality and Safety Features

RoHS3 compliant

Ensures reliable and safe operation

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Power amplifiers

Switch-mode power supplies

Motor drives

Industrial control circuits

Product Lifecycle

The NSS60601MZ4T3G is an active product and is not nearing discontinuation.

Replacement or upgraded products may be available in the future.

Key Reasons to Choose This Product

High current-handling capacity and frequency performance

Excellent thermal stability and reliability

Compact and efficient package design

Suitable for a wide range of high-power, high-frequency applications