NSS60601MZ4T1G - onsemi

Manufacturer Part Number

NSS60601MZ4T1G

Manufacturer

onsemi

Introduction

This is a discrete NPN bipolar junction transistor (BJT) in a SOT-223 (TO-261) package, suitable for a variety of power switching and amplification applications.

Product Features and Performance

High collector current capacity of up to 6A

Wide collector-emitter breakdown voltage of up to 60V

Low collector-emitter saturation voltage of 300mV @ 6A

Wide operating temperature range of -55°C to 150°C

High DC current gain of 120 or more

Fast transition frequency of 100MHz

Product Advantages

Compact surface mount package

High power capability in a small footprint

Reliable performance across wide operating conditions

Suitable for efficient power conversion and control applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 60V

Collector Current (max): 6A

Collector Cutoff Current (max): 100nA

DC Current Gain (min): 120

Transition Frequency: 100MHz

Power Dissipation (max): 800mW

Quality and Safety Features

RoHS3 compliant

Suitable for lead-free reflow soldering

Compatibility

This transistor can be used as a replacement or upgrade for various power switching and amplification applications.

Application Areas

Power supplies

Motor drives

Lighting controls

Industrial automation

Audio amplifiers

Product Lifecycle

This product is currently in active production and readily available. Replacements and upgrades may become available in the future as technology evolves.

Key Reasons to Choose This Product

High power handling capability in a compact package

Wide operating voltage and temperature range

Excellent electrical performance for efficient power conversion

Reliable and RoHS-compliant construction

Compatibility with various power electronics applications