NSS60600MZ4T3G - onsemi

Manufacturer Part Number

NSS60600MZ4T3G

Manufacturer

onsemi

Introduction

High current PNP bipolar junction transistor (BJT) in a surface-mount SOT-223 package.

Product Features and Performance

High current capability up to 6A

Wide voltage range up to 60V

High current gain of 120 at 1A, 2V

High transition frequency of 100MHz

Low collector-emitter saturation voltage of 350mV at 600mA, 6A

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact surface-mount package

High power handling capability

Excellent high-frequency performance

Robust design for reliable operation

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 60V

Current Collector (Ic) (Max): 6A

Current Collector Cutoff (Max): 100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A

DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V

Frequency Transition: 100MHz

Quality and Safety Features

RoHS3 compliant

Reliable and robust design for industrial applications

Compatibility

Surface-mount SOT-223 (TO-261) package

Compatible with common PCB assembly processes

Application Areas

Power amplifiers

Motor drivers

Switching regulators

Industrial control systems

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement and upgrade options available from onsemi

Key Reasons to Choose This Product

High current and voltage handling capability

Excellent high-frequency performance

Compact surface-mount package for space-constrained designs

Robust and reliable design for industrial applications

RoHS3 compliance for environmental considerations

Readily available and supported by onsemi