NSS60101DMTTBG - onsemi

Manufacturer Part Number

NSS60101DMTTBG

Manufacturer

onsemi

Introduction

Discrete Semiconductor Products

Transistors Bipolar (BJT) Arrays

Product Features and Performance

Dual NPN transistors

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 2.27W

Voltage Collector Emitter Breakdown (Max): 60V

Current Collector (Ic) (Max): 1A

Current Collector Cutoff (Max): 100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A

DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V

Frequency Transition: 180MHz

Product Advantages

RoHS3 Compliant

Surface Mount Packaging

Key Technical Parameters

Package / Case: 6-WDFN Exposed Pad

Supplier Device Package: 6-WDFN (2x2)

Package: Tape & Reel (TR)

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting Type

Application Areas

Discrete Semiconductor Applications

Product Lifecycle

Currently available product

Several Key Reasons to Choose This Product

Dual NPN transistor design

Wide operating temperature range of -55°C to 150°C

High power capacity of up to 2.27W

High voltage and current ratings of 60V and 1A respectively

Low collector-emitter saturation voltage of 180mV

High DC current gain of 120 minimum

High transition frequency of 180MHz

RoHS3 compliant and surface mount packaging for compatibility and quality