NSS40600CF8T1G - onsemi

Manufacturer Part Number

NSS40600CF8T1G

Manufacturer

onsemi

Introduction

The NSS40600CF8T1G is a high-performance PNP bipolar junction transistor (BJT) from onsemi, suitable for a variety of power electronics and switching applications.

Product Features and Performance

Very low collector-emitter saturation voltage (Vce(sat)) of 220 mV at 4 A collector current

High DC current gain (hFE) of 220 at 1 A collector current

High frequency performance with a transition frequency (fT) of 100 MHz

Low power dissipation of 830 mW

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent electrical characteristics for efficient power switching

Small, surface-mount ChipFET package enables compact designs

Robust performance across a wide temperature range

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 40 V

Collector Current (IC): 6 A (Max), 10 A (Collector Cutoff)

Power Dissipation: 830 mW

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Reliable surface-mount ChipFET package

Compatibility

Suitable for a variety of power electronics and switching applications

Application Areas

Power supplies

Motor drives

Lighting control

Industrial electronics

Product Lifecycle

The NSS40600CF8T1G is an actively supported product, with no plans for discontinuation.

Replacements and upgrades may be available in the future as technology advances.

Several Key Reasons to Choose This Product

Excellent electrical performance with low Vce(sat) and high hFE for efficient power switching

Robust thermal performance and wide operating temperature range

Compact and space-saving surface-mount ChipFET package

RoHS3 compliance for environmental responsibility

Reliable and actively supported product with potential for future replacements and upgrades