NSS40301MDR2G - onsemi

Manufacturer Part Number

NSS40301MDR2G

Manufacturer

onsemi

Introduction

High voltage, high current dual NPN bipolar junction transistor array

Product Features and Performance

Dual NPN transistor array in 8-SOIC package

Rated for 40V collector-emitter voltage

Capable of 3A collector current

High DC current gain of 180 min at 1A, 2V

Transition frequency of 100MHz

Low collector-emitter saturation voltage of 115mV at 200mA, 2A

Product Advantages

High voltage and high current capability in a small footprint

Excellent electrical characteristics for power switching and amplification applications

Dual transistor design for space-saving and circuit optimization

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 40V

Current Collector (Ic) (Max): 3A

Current Collector Cutoff (Max): 100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A

DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V

Frequency Transition: 100MHz

Quality and Safety Features

RoHS3 compliant

Qualified to AEC-Q101 automotive standard

Compatibility

Surface mount 8-SOIC package

Application Areas

Power amplifiers

Power switches

Motor drives

Industrial control circuits

Product Lifecycle

This product is currently in active production and not nearing discontinuation.

Replacements and upgrades may be available from onsemi in the future.

Key Reasons to Choose This Product

High voltage and high current capability in a small package

Excellent electrical characteristics for power switching and amplification

Dual transistor design for space-saving and circuit optimization

Qualified to automotive standards for reliability

Availability of surface mount package for easy integration